Modelling and Performance Analysis of a perforated Capacitive Shunt RF MEMS Switch

Abstract

In this paper, we reported the concept of L-shaped beam of a switch along with perforations. The concept is involving in electromechnical, electromagnetic, switching and stress analysis to reduce the pull-in-voltage and increases the high isolation. By changing the beam materials, dielectric materials, beam thickness, dielectric thickness and thickness between the dielectric layer and beam are used to impact on spring constant and pull-in-voltage. The Simulated and analytical values of proposed switch is validated by using FEM tool. The calculated pull-in-voltage of L-shaped beam is 2.28 V. The analysis of proposed switch is observed that L- shaped beam shows as high isolation of -47 dB over 26.5 GHz frequency.

Keywords: pull-in-voltage, spring constant, switching time analysis, stress, isolation.

Cite this Article: Girija Sravani K., Prathyusha D., Koushik Guha, Srinivasa Rao K. Modelling and Performance Analysis of a Perforated Capacitive Shunt RF MEMS Switch. International Journal of Wireless Network Security. 2020; 6(1): 25–34p.