Optimization and analysis of Bridge type RF-MEMS switch for X-band

Abstract

This paper presents the Optimization of bridge type RF MEMS switch with and without perforations having non uniform meanders. The optimization of switch is designed for low frequency range at 8 to 12 GHz (X-band applications). The switch is designed CPW length 803um, signal line and actuated beam. The gap between beam and dielectric is taken 1um. These dimensions are theoretically analysed by Optimization process. Material selection is characterized the performance of the switch by ASBYS approach method. The selecting beam material is taken as gold, because it has high thermal conductivity and Si3N4 is taken as dielectric, these two are increases the switching performance of the switch. Electro mechanical analysis is done by using COMSOL software to simulate all switching parameters. The pull-in voltage of the proposed switch is 4.9V, and having fast switching time 0.03us. The capacitance is important key parameter for the switch. The UP state capacitance is 1.27fF, and calculated down state capacitance is 6.72pF. The RF analysis is simulated in HFSS software. The perforated switch having return loss is - 30.67dB, insertion loss -0.07 dB, and isolation is -19.46 dB, without perforated switch return loss is -37.53 dB, insertion loss - 0.076dB, having isolation is -22.55dB, at 8 to 12GHz. By comparing these two, the perforated switch given good results. This Optimized bridge type RF MEMS switch is used for low frequencies like X-band applications.

Keywords: Bridge type switch, Spring Constant, Actuation voltage, S-parameters, Comsol software and HFSS Software.

Cite this Article: Srinivasa Rao K., Gopi Chand C.H., Koushik Guha, Girija Sravani K. Optimization and Analysis of Bridge Type RF-MEMS Switch for X-band. International Journal of Information Security and Software Engineering. 2020; 6(1): 25–38p.